-
1
-
-
0021156109
-
Effect of resist patterning on gate oxide integrity in source/drain implant
-
R. Tong and P. McNally, Effect of resist patterning on gate oxide integrity in source/drain implant, Nucl. Instrum. Meth. Phys. Res. B, 6 (1985) 376.
-
(1985)
Nucl. Instrum. Meth. Phys. Res. B
, vol.6
, pp. 376
-
-
Tong, R.1
McNally, P.2
-
3
-
-
0024606766
-
Wafer charging control in the 160 XP High Current Implanter
-
C.M. McKenna, B.O. Pedersen, J.K. Lee, R.F. Outcault and S. Kikuchi, Wafer charging control in the 160 XP High Current Implanter, Nucl. Instrum. Meth. Phys. Res. B, 37/38 (1989) 492.
-
(1989)
Nucl. Instrum. Meth. Phys. Res. B
, vol.37-38
, pp. 492
-
-
McKenna, C.M.1
Pedersen, B.O.2
Lee, J.K.3
Outcault, R.F.4
Kikuchi, S.5
-
5
-
-
0024608216
-
Analysis techniques of charging damage studied on three different high-current ion implanters
-
S.B. Felch, L.A. Larson, M.I. Current and D.W. Lindsey, Analysis techniques of charging damage studied on three different high-current ion implanters, Nucl. Instrum. Meth. Phys. Res. B, 37/38 (1989) 563.
-
(1989)
Nucl. Instrum. Meth. Phys. Res. B
, vol.37-38
, pp. 563
-
-
Felch, S.B.1
Larson, L.A.2
Current, M.I.3
Lindsey, D.W.4
-
6
-
-
0021407489
-
Dielectric breakdown of gate insulator due to reactive ion etching
-
T. Watanabe and Y. Yoshida, Dielectric breakdown of gate insulator due to reactive ion etching, Solid State Technol., 27 (1984) 263.
-
(1984)
Solid State Technol.
, vol.27
, pp. 263
-
-
Watanabe, T.1
Yoshida, Y.2
-
7
-
-
0005991229
-
Charge sharing 'antenna' effects for gate oxide damage during plasma processing
-
J.M. Andrews and G.K. Cellar (eds.), PV 91-11
-
S. Fang, A.M. McCarty and J.P. McVittie, Charge sharing 'antenna' effects for gate oxide damage during plasma processing, in J.M. Andrews and G.K. Cellar (eds.), ULSI Science and Technology, PV 91-11, p. 473.
-
ULSI Science and Technology
, pp. 473
-
-
Fang, S.1
McCarty, A.M.2
McVittie, J.P.3
-
8
-
-
0026929133
-
Process-induced gate oxide charge collector damage
-
W.M. Greene and C.K. Lau, Process-induced gate oxide charge collector damage, J. Electrochem. Soc., 139(10) (1992) 2948.
-
(1992)
J. Electrochem. Soc.
, vol.139
, Issue.10
, pp. 2948
-
-
Greene, W.M.1
Lau, C.K.2
-
9
-
-
0026993978
-
Dependence of plasma-induced oxide charging current on Al antenna geometry
-
H. Shin and C. Hu, Dependence of plasma-induced oxide charging current on Al antenna geometry, Electron. Device Lett., 13(12) (1992) 600.
-
(1992)
Electron. Device Lett.
, vol.13
, Issue.12
, pp. 600
-
-
Shin, H.1
Hu, C.2
-
10
-
-
0024907452
-
-
F. Shone, K. Wu, J. Shaw, E. Hokelek, S. Mittal and A. Haranahalli, Symp. on VLSI Technology, 1989, p. 73.
-
(1989)
Symp. on VLSI Technology
, pp. 73
-
-
Shone, F.1
Wu, K.2
Shaw, J.3
Hokelek, E.4
Mittal, S.5
Haranahalli, A.6
-
11
-
-
0026882443
-
A model and experiments for thin oxide damage from wafer charging in magnetron plasmas
-
S. Fang and J. McVittie, A model and experiments for thin oxide damage from wafer charging in magnetron plasmas, Electron Device Lett., 13(6) (1992) 347.
-
(1992)
Electron Device Lett.
, vol.13
, Issue.6
, pp. 347
-
-
Fang, S.1
McVittie, J.2
-
12
-
-
0026203864
-
Thin oxide charging current during plasma etching of aluminum
-
H. Shin, C.C. King, T. Horiuchi and C. Hu, Thin oxide charging current during plasma etching of aluminum, Electron Device Lett., 12(8) (1991) 404.
-
(1991)
Electron Device Lett.
, vol.12
, Issue.8
, pp. 404
-
-
Shin, H.1
King, C.C.2
Horiuchi, T.3
Hu, C.4
-
13
-
-
0026367571
-
Analysis of process induced charges created in Mosfets and related collection test structures
-
P. Dars, R. Basset and G. Merckel, Analysis of process induced charges created in Mosfets and related collection test structures, ICMTS, 4(1) (1991) 51.
-
(1991)
ICMTS
, vol.4
, Issue.1
, pp. 51
-
-
Dars, P.1
Basset, R.2
Merckel, G.3
-
14
-
-
85029991768
-
Integrated circuit damage due to electrical stress, Tutorial notes
-
7c.1
-
C. Duvvury, C. Hu and G. Hills, Integrated circuit damage due to electrical stress, Tutorial notes, IRPS (1994) 7c.1.
-
(1994)
IRPS
-
-
Duvvury, C.1
Hu, C.2
Hills, G.3
-
15
-
-
0028272857
-
Effect of plasma-induced charging damage on n-channel and p-channel MOSFET hot carrier reliability
-
K.R. Mistry, B.J. Fishbein and B.S. Doyle, Effect of plasma-induced charging damage on n-channel and p-channel MOSFET hot carrier reliability, IRPS (1994) 42.
-
(1994)
IRPS
, pp. 42
-
-
Mistry, K.R.1
Fishbein, B.J.2
Doyle, B.S.3
-
16
-
-
0027302101
-
Thickness and other effects on oxide and interface damage by plasma processing
-
H. Shin, K. Noguchi and C. Hu, Thickness and other effects on oxide and interface damage by plasma processing, IRPS (1993) 272.
-
(1993)
IRPS
, pp. 272
-
-
Shin, H.1
Noguchi, K.2
Hu, C.3
-
17
-
-
0027186745
-
Process induced oxide damage and its implications to device reliability of submicron transistors
-
R. Rakkhit, F.P. Heiler, P. Fang and C. Sander, Process induced oxide damage and its implications to device reliability of submicron transistors, IRPS (1993) 293.
-
(1993)
IRPS
, pp. 293
-
-
Rakkhit, R.1
Heiler, F.P.2
Fang, P.3
Sander, C.4
-
18
-
-
0026867840
-
Thin oxide damage from gate charging during plasma processing
-
S. Fang and J.P. McVittie, Thin oxide damage from gate charging during plasma processing, Electron Device Lett., 13(5) (1992) 288.
-
(1992)
Electron Device Lett.
, vol.13
, Issue.5
, pp. 288
-
-
Fang, S.1
McVittie, J.P.2
-
19
-
-
0026839218
-
Thin oxide damage by plasma etching and ashing processes
-
H. Shin, C.C. King and C. Hu, Thin oxide damage by plasma etching and ashing processes, IRPS (1992) 37.
-
(1992)
IRPS
, pp. 37
-
-
Shin, H.1
King, C.C.2
Hu, C.3
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