The role of sulfur during Mo etching using SF6 and Cl2 gas chemistries

Journal of Materials Science Letters

Volumn 17, Issue 17, 1998, Pages 1483-1486

  Baek, K H ^a   Yun, S J ^a   Park, J M ^a   Yoon, Y S ^a   Nam, K S ^a   Kwon, K H ^b   Kim, C I ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Hanseo University   (South Korea)

^c Anyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; CHLORINE; FILM GROWTH; INTEGRATED CIRCUIT MANUFACTURE; PLASMA ETCHING; SILICON WAFERS; SPUTTERING; SULFUR COMPOUNDS; THERMAL EXPANSION; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOSITIONAL ANALYSIS; GAS-MIXING RATIOS;

MOLYBDENUM;

EID: 0032154923     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026434619677     Document Type: Article

References (8)

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