All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces

Journal of Applied Physics

Volumn 114, Issue 3, 2013, Pages

  Filho, O P Silva ^a,b   Ribeiro, M ^a   Pela R R ^a   Teles, L K ^a   Ferreira, L G ^a,c   Marques, M ^a  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b INSTITUTO DE ESTUDOS AVANÇADOS   (Brazil)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRONIC PROPERTIES; ENERGY GAP; III-V SEMICONDUCTORS;

AB INITIO PREDICTION; ALN/GAN; BAND-OFFSET; BULK ALN; CONDUCTION-BAND PROFILE; ELECTRONIC TRANSITION; FUNDAMENTAL BAND GAP; HYBRID FUNCTIONALS; QUASI-PARTICLE APPROACH; TRANSITION LEVEL;

CALCULATIONS;

EID: 84880835036     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812493     Document Type: Article

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