Improvement of optical properties of gas source MBE grown GaP/A1P short period superlattices

Applied Surface Science

Volumn 92, Issue , 1996, Pages 566-570

  Kim, J H ^a   Asahi, H ^a   Asami, K ^a   Ogura, T ^a   Doi, K ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE MEASUREMENT;

GAS SOURCE MOLECULAR BEAM EPITAXY; GROWTH TEMPERATURE; OPTICAL TRANSITION TEMPERATURE; RAMAN SCATTERING MEASUREMENT;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030562397     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00296-0     Document Type: Article

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