Review on Gallium Nitride HEMT device technology for high frequency converter applications

Journal of Power Electronics

Volumn 9, Issue 1, 2009, Pages 36-42

  Yahaya, Nor Zaihar ^a   Raethar, Mumtaj Begam Kassim ^a   Awan, Mohammad ^a  

^a DEPARTMENT OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

Gallium nitride device; High frequency; Power converter

Indexed keywords

EID: 58849136226     PISSN: 15982092     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (21)

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