Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-6

  Niu, Lang ^a   Hao, Zhibiao ^a   Hu, Jiannan ^a   Hu, Yibin ^a   Wang, Lai ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

GaN QDs; Internal quantum efficiency; Quantum confined stark effect

Indexed keywords

ALN; EMISSION EFFICIENCIES; EPITAXIAL STRUCTURE; GAN LAYERS; GAN QDS; GAN/ALN QUANTUM DOTS; GREEN LIGHT; GROWTH OF GAN; INTERNAL QUANTUM EFFICIENCY; QUANTUM CONFINED STARK EFFECT; SPACER LAYER; SPACER THICKNESS;

EFFICIENCY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; STARK EFFECT;

QUANTUM EFFICIENCY;

EID: 84862950726     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-611     Document Type: Article

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