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Applied Physics Letters

Volumn 101, Issue 17, 2012, Pages

Electronic states and curved surface effect of silicon quantum dots

(7) Huang, Wei Qi a Huang, Zhong Mei a Cheng, Han Qiong a Miao, Xin Jian a Shu, Qin a Liu, Shi Rong b Qin, Chao Jian b

a GUIZHOU UNIVERSITY (China)

b INSTITUTE OF GEOCHEMISTRY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ENERGIES; CURVED SURFACES; IN-BAND; LOCALIZED ELECTRONIC STATE; LOCALIZED LEVELS; NANOPHYSICS; PHOTOLUMINESCENCE SPECTRUM; QUANTUM CONFINEMENT EFFECTS; SI-O-SI BRIDGE; SILICON NANOSTRUCTURES; SILICON QUANTUM DOTS; SURFACE CURVATURES;

ELECTRONIC STATES; ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SURFACES;

SILICON;

EID: 84868017404 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4761945 Document Type: Article

Times cited : (43)

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