High-performance gate-all-around poly-Si thin-film transistors by microwave annealing with NH3 plasma passivation

IEEE Transactions on Nanotechnology

Volumn 12, Issue 4, 2013, Pages 636-640

  Yeh, Mu Shih ^a   Lee, Yao Jen ^b,c   Hung, Min Feng ^a   Liu, Kuan Cheng ^a   Wu, Yung Chun ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

3 D ICs; Microwave annealing (MWA); polycrystalline silicon (poly Si); rapid thermal annealing (RTA); thin film transistor (TFT)

Indexed keywords

3-D ICS; C. THIN FILM TRANSISTOR (TFT); MICROWAVE ANNEALING; POLYCRYSTALLINE SILICON (POLY-SI); RAPID THERMAL ANNEALING (RTA);

GALLIUM ALLOYS; INTEGRATED CIRCUITS; MICROWAVE HEATING; PLASMA APPLICATIONS; POLYSILICON; RAPID THERMAL ANNEALING; SEMICONDUCTING ORGANIC COMPOUNDS; TEMPERATURE; THIN FILM TRANSISTORS;

SEMICONDUCTING SILICON;

EID: 84880440097     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2265778     Document Type: Article

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