Novel gate-all-around poly-Si TFTs with multiple nanowire channels

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 889-891

  Liao, Ta Chuan ^a   Tu, Shih Wei ^a   Yu, Ming H ^a   Lin, Wei Kai ^a   Liu, Cheng Chin ^a   Chang, Kuo Jui ^a   Tai, Ya Hsiang ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gate all around (GAA); Nanowire; Poly Si; Thin film transistors (TFTs); Three dimensional (3 D) device

Indexed keywords

ELECTRIC WIRE; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOWIRES; OPTICAL DESIGN; POLYSILICON; SILICON; THIN FILM TRANSISTORS;

ELECTRICAL CHARACTERISTICS; GATE-ALL-AROUND; GATE-ALL-AROUND (GAA); NANOWIRE; POLY-SI; POLY-SI TFTS; POLY-SI THIN-FILM TRANSISTORS; SHORT-CHANNEL EFFECTS; THICKNESS-TO-WIDTH RATIO; THIN-FILM TRANSISTORS (TFTS); THREE-DIMENSIONAL (3-D) DEVICE;

NANOSTRUCTURES;

EID: 48649100588     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001176     Document Type: Article

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