Effect of oxygen partial pressure on the behavior of dual ion beam sputtered ZnO thin films

Semiconductor Science and Technology

Volumn 28, Issue 8, 2013, Pages

  Pandey, Saurabh Kumar ^a   Pandey, Sushil Kumar ^a   Deshpande, Uday P ^b   Awasthi, Vishnu ^a   Kumar, Ashish ^a   Gupta, Mukul ^b   Mukherjee, Shaibal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY INDORE   (India)

^b University Grant Commission Department of Atomic Energy Consortium for Scientific Research   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PROPERTIES; DUAL ION BEAM SPUTTERING; NEAR BAND EDGE EMISSIONS; OXYGEN INTERSTITIALS; OXYGEN PARTIAL PRESSURE; PHOTOLUMINESCENCE MEASUREMENTS; ROOM TEMPERATURE; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

ELECTRIC PROPERTIES; OPTICAL FILMS; PARTIAL PRESSURE; PHOTOELECTRONS; POINT DEFECTS; POSITIVE IONS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

METALLIC FILMS;

EID: 84880256528     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/8/085014     Document Type: Article

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