Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 299-304

  Lu, Y M ^a,b   Wu, C X ^a   Wei, Z P ^a   Zhang, Z Z ^a   Zhao, D X ^a   Zhang, J Y ^a   Liu, Y C ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NONE   (China)

Author keywords

A1. Interface potential barrier; A1. Photoluminescence; A3. Molecular beam epitaxy; B1. ZnO MgZno; B2. Semiconducting II VI materials; B3. Heterojunction semiconductor device

Indexed keywords

ABSORPTION; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); MAGNESIUM COMPOUNDS; PHOTOLUMINESCENCE; QUENCHING; RELAXATION PROCESSES; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

HETEROJUNCTION SEMICONDUCTOR DEVICES; INTERFACE POTENTIAL BARRIER; SEMICONDUCTING II-VI MATERIALS; ZNO/MGZNO;

HETEROJUNCTIONS;

EID: 18444396640     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.023     Document Type: Conference Paper

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