Oxidation and sulfidation of germanium surfaces: A comparative atomic level study of different passivation schemes

ECS Transactions

Volumn 50, Issue 9, 2013, Pages 569-579

  Fleischmann, C ^a   Schouteden, K ^b   Houssa, M ^a   Sioncke, S ^c   Merckling, C ^c   Meuris, M ^c   Honicke P ^d   Muller M ^d   Beckhoff, B ^d   Van Haesendonck, C ^b   Temst, K ^a   Vantomme, A ^a  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

^d PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; MICROELECTRONICS; OXIDATION; PASSIVATION;

ATOMIC LEVELS; ATOMIC SCALE PROCESS; ELECTRICALLY ACTIVE DEFECTS; GERMANIUM SURFACE; MICRO-ELECTRONIC DEVICES; PASSIVATED SURFACE; SULFIDATION;

SI-GE ALLOYS;

EID: 84880240645     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05009.0569ecst     Document Type: Conference Paper

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