Effect of Ge surface termination on oxidation behavior

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7544-7548

  Lee, Younghwan ^a   Park, Kibyung ^a   Cho, Yong Soo ^a   Lim, Sangwoo ^a  

^a Yonsei University   (South Korea)

Author keywords

Germanium; Oxidation; Surface; Termination

Indexed keywords

DESORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM; INTERNAL OXIDATION; OXIDATION; SULFUR; SURFACES;

AIR AMBIENT; DESORPTION BEHAVIOR; H-TERMINATION; MULTIPLE INTERNAL REFLECTIONS; OXIDATION BEHAVIORS; OXIDE GROWTH; SURFACE OXIDATIONS; TERMINATION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 51249083900     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.01.022     Document Type: Article

References (31)

1. Sze S.M. Physics of Semiconductor Devices (1981), Wiley, New York
2. Kittel C. Introduction to Solid State Physics. sixth ed. (1986), John Wiley and Sons, New York
3. Bodlaki D., Yamamoto H., Waldeck D.H., and Borguet E. Surf. Sci. 543 (2003) 63
4. Rivillon S., Chabal Y.J., Amy F., and Kahn A. Appl. Phys. Lett. 87 (2005) 253101
5. Xhang X.-J., Xue G., Agarwal A., Tsu R., Hasan M.-A., Greene J.E., and Rockett A. J. Vac. Sci. Technol. A 11 (1993) 2553
6. Akane T., Tanaka J., Okumura H., and Matsumoto S. Appl. Surf. Sci. 108 (1997) 303
7. Park K., Lee Y., and Lim S. Appl. Surf. Sci. 254 (2007) 1842
8. Cattoni A., Bertacco R., Riva M., Cantoni M., Ciccacci F., Von Känel H., and Norga G.J. Mater. Sci. Semicond. Process. 9 (2006) 701
9. Bringans R.D., Uhrberg R.I.G., Bachrach R.Z., and Northrup J.E. Phys. Rev. Lett. 55 (1985) 533
10. Leys F.E., Bonzom R., Kaczer B., Janssens T., Vandervorst W., De Jaeger B., Van Steenbergen J., Martens K., Hellin D., Rip J., Dilliway G., Delabie A., Zimmerman P., Houssa M., Theuwis A., Loo R., Meuris M., Caymax M., and Heyns M.M. Mater. Sci. Semicond. Process. 9 (2006) 679
11. Jeon S.M., Jung S.J., Kim H.-.D., Lim D.K., Lee H., and Kim S. J. Phys. Chem. B 110 (2006) 21728
12. Han S.M., Ashurst W.R., Carraro C., and Maboudian R. J. Am. Chem. Soc. 123 (2001) 2422
13. Frank M.M., Koester S.J., Copel M., Ott J.A., Paruchuri V.K., Shang H., and Loesing R. Appl. Phys. Lett. 89 (2006) 112905
14. Maeda T., Takagi S., Ohnishi T., and Lippmaa M. Mater. Sci. Semicond. Process. 9 (2006) 706
15. Ma P., Anderson G.W., and Norton P.R. Surf. Sci. 420 (1999) 134
16. Houssa M., Pourtois G., Kaczer B., De Jaeger B., Leys F.E., Nelis D., Paredis K., Vantomme A., Caymax M., Meuris M., and Heyns M.M. Microelectron. Eng. 84 (2007) 2267
17. Leung K.T., Terminello L.J., Hussain Z., Zhan X.S., Hayshi T., and Shirley D.A. Phys. Rev. B 38 (1988) 8241
18. Newstead K., Robinson A.W., d'Addato S., Patchett A., Prince N.P., McGrath R., Whittle R., Dudzik E., and McGovern I.T. J. Phys.: Condens. Matter 4 (1992) 8441
19. Anderson G.W., Hanf M.C., Norton P.R., Lu Z.H., and Graham M.J. Appl. Phys. Lett. 66 (1995) 1123
20. Roche J., Ryan P., and Hughes G.J. Surf. Sci. 465 (2000) 115
21. Roche J., Ryan P., and Hughes G.J. Appl. Surf. Sci. 174 (2001) 271
22. Weser T., Bogen A., Konrad B., Schnell R.D., Schug C.A., and Steinmann W. Phys. Rev. B 25 (1987) 8184
23. D.R. Lide (Ed.), CRC Handbook of Chemistry and Physics, 86th ed., CRC Press, New York, 2005.
24. Krüger P., and Pollmann J. Phys. Rev. Lett. 64 (1990) 1808
25. Pollmann J., Krüger P., and Mazur A. Appl. Surf. Sci. 56-58 (1992) 193
26. Gloching F. The Chemistry of Germanium (1969), Academic Press, London and New York
27. Chabal Y.J. Surf. Sci. 168 (1986) 594
28. K.B. Park, Y.H. Lee, J.H. Lee, S.W. Lim, Appl. Surf. Sci., in press.
29. Miura T.-A., Niwano M., Shoji D., and Miyamoto N. J. Appl. Phys. 79 (1996) 4373
30. Chuang T.-C. CRC Crit. Rev. Solid State Mater. Sci. 14 (1988) 269
31. Lyman P.F., Sakata O., Marasco D.L., Lee T.-L., Breneman K.D., Keane D.T., and Bedzyk M.J. Surf. Sci. 462 (2000) L594