Adsorption of O 2 on Ge(100): Atomic geometry and site-specific electronic structure

Journal of Physical Chemistry C

Volumn 116, Issue 18, 2012, Pages 9925-9929

  Fleischmann, Claudia ^a   Schouteden, Koen ^b   Merckling, Clement ^c   Sioncke, Sonja ^c   Meuris, Marc ^c   Van Haesendonck, Chris ^b   Temst, Kristiaan ^a   Vantomme, André ^a  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION GEOMETRIES; ATOMIC GEOMETRY; BACKBONDS; DIMER BONDS; GE SURFACES; GE(100); GE(100) SURFACE; HIGH DENSITY; INITIAL OXIDATION; MICRO-ELECTRONIC DEVICES; OXIDE COMPLEXES; OXIDIZED SURFACES; OXYGEN ADSORPTION; OXYGEN ATOM; REACTION CONDITIONS; REAL-SPACE; SEMICONDUCTOR-OXIDE INTERFACE; SITE-SPECIFIC; SUBSTRATE ATOM; SURFACE BONDS;

ATOMS; DANGLING BONDS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GAS ADSORPTION; MICROELECTRONICS; OXYGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SURFACE CHEMISTRY; SURFACE ROUGHNESS; SURFACE STATES;

GERMANIUM;

EID: 84861043699     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2101144     Document Type: Article

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