Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

Journal of Crystal Growth

Volumn 334, Issue 1, 2011, Pages 113-117

  Goodman, Kevin ^a   Protasenko, Vladimir ^a   Verma, Jai ^a   Kosel, Tom ^a   Xing, Grace ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

A1. Nanowires; A3. Molecular beam epitaxy; B1. Aluminum oxide; B1. Nitride

Indexed keywords

ALUMINUM OXIDES; AMORPHOUS ALUMINUM OXIDE; AMORPHOUS SUBSTRATE; ATOMIC LAYER DEPOSITED; B1. ALUMINUM OXIDE; DEVICE DESIGN; GALLIUM NITRIDE NANOWIRES; GROWTH SUBSTRATES; HIGH QUALITY; MOLECULAR BEAM EPITAXIAL GROWTH; NANOWIRE GROWTH; SEMICONDUCTOR NANOWIRE; SILICON (100);

ALUMINUM; ALUMINUM COATINGS; AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; OXIDE FILMS; OXIDES; SEMICONDUCTOR GROWTH; SUBSTRATES;

ALUMINUM GALLIUM NITRIDE;

EID: 80053318820     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.08.032     Document Type: Article

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