Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence

Nano Letters

Volumn 12, Issue 2, 2012, Pages 915-920

  Carnevale, Santino D ^a   Kent, Thomas F ^a   Phillips, Patrick J ^a   Mills, Michael J ^a   Rajan, Siddharth ^a   Myers, Roberto C ^a  

^a Ohio State University   (United States)

Author keywords

light emitting diode; molecular beam epitaxy; Nanostructures; nitrides; polarization; ultraviolet emission

Indexed keywords

ACCEPTOR DOPING; ACTIVE REGIONS; ALGAN; ALN BARRIERS; BAND GAPS; DEEP ULTRAVIOLET LED; DONOR AND ACCEPTOR; ELECTRONIC DEVICE; ELECTRONS AND HOLES; IMPURITY ATOMS; IMPURITY DOPING; P-N DIODE; P-N JUNCTION; P-TYPE CONDUCTIVITY; PLANAR FILMS; POLAR SEMICONDUCTORS; POLARIZATION CHARGES; QUANTUM DISKS; SEMICONDUCTOR NANOWIRE; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET EMISSION; UNIT CELLS; WIDE BAND GAP; WIDE-BAND-GAP SEMICONDUCTOR;

CELL ENGINEERING; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; NANOWIRES; NITRIDES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

POLARIZATION;

ALUMINUM DERIVATIVE; ALUMINUM GALLIUM NITRIDE; GALLIUM; NANOWIRE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; LUMINESCENCE; ULTRAVIOLET RADIATION;

ALUMINUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; GALLIUM; LUMINESCENCE; NANOWIRES; ULTRAVIOLET RAYS;

EID: 84856962976     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl203982p     Document Type: Article

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