The dissociation of the [a + c] dislocation in GaN

Philosophical Magazine

Volumn 93, Issue 28-30, 2013, Pages 3925-3938

  Hirsch, P B ^a   Lozano, J G ^a   Rhode, S ^b   Horton, M K ^c   Moram, M A ^c   Zhang, S ^b   Kappers, M J ^b   Humphreys, C J ^b   Yasuhara, A ^d   Okunishi, E ^d   Nellist, P D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d JEOL LTD   (Japan)

Author keywords

Aberration correction; ADF; Dislocation structures; GaN; STEM

Indexed keywords

ABERRATION CORRECTION; ADF; DISLOCATION STRUCTURES; GAN; STEM;

CRYSTAL ATOMIC STRUCTURE; DISSOCIATION; GALLIUM NITRIDE; SAPPHIRE; STACKING FAULTS; STRAIN HARDENING; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATIONS (CRYSTALS);

EID: 84885654884     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786435.2013.797617     Document Type: Article

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