Effect Of The Eshelby-Stroh Twist In Dislocations In GaN Imaged End-On

Microscopy and Microanalysis

Volumn 18, Issue , 2012, Pages 1338-1339

  Lozano, J G ^a   Guerrero Lebrero, M P ^b   Galindo, P L ^b   Nellist, P D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85007952738     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927612008549     Document Type: Article

References (6)

1. Wright A.F., Grossner U., “The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN”, Appl. Phys. Lett. 73, 2751 (1998)
2. Hino T. et al, “Characterization of threading dislocations in GaN epitaxial layers”, Appl. Phys. Lett. 76, 3421 (2000)
3. Eshelby J.D., Stroh A.N., “CXL. Dislocations in thin plates”, Philosophical Magazines Series 7 42, 1401 (1951)
4. Cosgriff E.C. et al, “ADF STEM imaging of screw dislocations viewed end-on”, Philosophical Magazine 90, 4361 (2010)
5. Pizarro J. et al, “Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures”, Appl. Phys. Lett. 93, 153107 (2008)
6. Cosgriff E.C., Nellist P.D., “ A Bloch wave analysis of optical sectioning in aberrationcorrected STEM”, Ultramicroscopy 107, 626 (2007)