Core structure of pure edge threading dislocations in GaN layers grown on [0001] SiC or sapphire by MBE

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 459-464

  Ruterana, P ^a   Potin, V ^a   Nouet, G ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); IMPURITIES; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

PURE EDGE THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031388254     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-459     Document Type: Conference Paper

References (22)