Investigation of the atomic structure of the pure edge and a + c threading dislocations in gan layers grown by MBE

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 177-181

  Ruterana, Pierre ^a   Potin, Valérie ^a   Nouet, Gérard ^a   Bonnet, Roland ^b   Loubradou, Marc ^b  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); ELASTICITY; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; SAPPHIRE; SILICON CARBIDE; VECTORS;

ACTIVE LAYERS; ATOM RING; ATOMIC STRUCTURE; BURGERS VECTOR; GALLIUM NITRIDE; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528928     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00396-1     Document Type: Article

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