HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Joshi, K ^a   Hung, S ^b   Mukhopadhyay, S ^a   Chaudhary, V ^a   Nanaware, N ^a   Rajamohnan, B ^c   Sato, T ^b   Bevan, M ^b   Wei, A ^b   Noori, A ^b   Mc Dougal, B ^b   Ni, C ^b   Saheli, G ^b   Lazik, C ^b   Liu, P ^b   Chu, D ^b   Date, L ^b   Datta, S ^c   Brand, A ^b   Swenberg, J ^b   Mahapatra, S ^a   more..

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b Applied Material Inc   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

charge trapping; Chem Ox IL; DCIV; EOT scaling; flicker noise; gate leakage; HKMG; IL scaling; mobility; NBTI; PBTI; SILC; thermal IL; trap generation

Indexed keywords

CHEM-OX; DCIV; EOT SCALING; FLICKER NOISE; GATE LEAKAGES; HKMG; IL SCALING; NBTI; PBTI; SILC; THERMAL IL; TRAP GENERATION;

CARRIER MOBILITY; CHARGE TRAPPING;

RELIABILITY;

EID: 84879970990     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6532014     Document Type: Conference Paper

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