Ultrathin SiO2 interface layer growth

18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010

Volumn , Issue , 2010, Pages 154-156

  Bevan, M J ^a   Curtis, R ^a   Guarini, T ^a   Liu, W ^a   Hung, S C H ^a   Graoui, H ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; GATE-LAST; HIGH-K DIELECTRIC; INTERFACE LAYER; METAL GATE; RADICAL OXIDATION; ULTRA-THIN;

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS;

REGENERATORS;

EID: 78650507252     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2010.5624252     Document Type: Conference Paper

References (2)

1. C. S. Lai et al, ISDRS 2007.
2. T-M Pan et al, IEEE Electron Device Lett., vol 23, p 416, 2002