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Volumn 38, Issue 4, 2009, Pages 484-489

Depletion-mode photoconductivity study of deep levels in GaN nanowires

(3) Armstrong, A a Wang, G T a Talin, A A b

a SANDIA NATIONAL LABORATORIES (United States)

b SANDIA NATIONAL LABORATORIES (United States)

Author keywords

Chemical vapor deposition; Defects in semiconductors; Optical properties of quantum wires; Quantum wires (electronic transport); Wide band gap semiconductors

Indexed keywords

BAND GAPS; CROSS-SECTIONAL AREAS; DEEP LEVEL SPECTRUM; DEEP LEVELS; DEEP-LEVEL DEFECTS; DEEP-LEVEL SPECTROSCOPIES; DEFECTS IN SEMICONDUCTORS; DEPLETION REGIONS; ELECTRICALLY CONDUCTIVE; ELECTROSTATIC MODELS; GAN FILMS; GAN NANOWIRES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; QUANTUM WIRES (ELECTRONIC TRANSPORT); STEADY-STATE PHOTOCONDUCTIVITIES; SURFACE DEPLETIONS; WIDE-BAND-GAP SEMICONDUCTORS;

CHEMICAL VAPOR DEPOSITION; CRYSTALS; DEFECTS; ELECTRIC WIRE; EMISSION SPECTROSCOPY; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; QUANTUM CHEMISTRY; RADIATION DAMAGE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; VAPORS;

SURFACE DEFECTS;

EID: 61849161561 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0569-2 Document Type: Conference Paper

Times cited : (20)

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