Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): Temperature dependent interface and strain

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 2, 2012, Pages 175-178

  Michon, A ^a   Largeau, L ^b   Mauguin, O ^b   Ouerghi, A ^b   Vezian S ^a   Lefebvre, D ^a   Roudon, E ^a   Zielinski, M ^c   Chassagne, T ^c   Portail, M ^a  

^a CRHEA CNRS   (France)

^b CNRS   (France)

^c SAVOIE TECHNOLAC   (France)

Author keywords

CVD; Graphene; Hydrogen; SiC; Strain

Indexed keywords

ANNEALING METHODS; GRAPHENE GROWTH; GRAZING INCIDENCE X-RAY DIFFRACTION; IN-PLANE; IN-PLANE DISORDER; IN-PLANE STRAINS; ROTATIONAL DISORDER; SIC; TEMPERATURE DEPENDENT;

CHEMICAL VAPOR DEPOSITION; GROWTH TEMPERATURE; HYDROGEN; PROPANE; SILICON CARBIDE; STRAIN; X RAY DIFFRACTION;

GRAPHENE;

EID: 84856139657     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100225     Document Type: Article

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