Proposal of the thermal equilibrium model for SiC hydrogen etching phenomena

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 211-214

  Ishida, Y ^a   Takahashi, T ^a   Okumura, H ^a   Arai, K ^a   Kimura, K ^b   Nakamura, K ^b   Yoshida, S ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NIHON UNIVERSITY   (Japan)

^c SAITAMA UNIVERSITY   (Japan)

Author keywords

Etching rate; Hydrogen etching; Thermal equilibrium model

Indexed keywords

ETCHING; HYDROGEN; PHASE EQUILIBRIA;

ETCHING RATE; EXPONENTIAL FUNCTIONS; HYDROGEN ETCHING; THERMAL EQUILIBRIUM MODELS;

SILICON CARBIDE;

EID: 37849049257     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.211     Document Type: Conference Paper

References (3)

1. mélange/Gémini is a LTPCM-Thermodata product, BP75, 38402 Saint Martin d'Heres, France.
2. K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida and K. Arai: Mater. Sci. Forum Vols. 389-393 (2002), p. 179.
3. K. Masahara, Y. Ishida, H. Okumura, T. Takahashi, M. Kushibe, T. Ohno, T. Suzuki, T. Tanaka, S. Yoshida, K. Arai K: Mater. Sci. Forum Vols. 338-342 (2000), p. 1037.