Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 238-243

  VanMil, B L ^a   Lew, K K ^a   Myers Ward, R L ^a   Holm, R T ^a   Gaskill, D K ^a   Eddy Jr , C R ^a   Wang, L ^b   Zhao, P ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

A1. Etching; A3. Chemical vapor deposition; B1. Silicon carbide

Indexed keywords

ACTIVATION ENERGY; ATMOSPHERIC TEMPERATURE; CHEMICAL VAPOR DEPOSITION; COMPETITION; DEGRADATION; DOPING (ADDITIVES); EPILAYERS; ETCHING; GROWTH (MATERIALS); GROWTH TEMPERATURE; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; HYDROGEN; MASS SPECTROMETRY; NITROGEN; NONMETALS; PHOTORESISTS; PROPANE; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SURFACE MORPHOLOGY; VAPORS;

A1. ETCHING; A3. CHEMICAL VAPOR DEPOSITION; B1. SILICON CARBIDE; CARBON SPECIES; DEVICE STRUCTURES; DOPANT ATOMS; DOPANT SPECIES; ETCH RATES; ETCHING MECHANISMS; ETCHING PROCESSES; GROWTH PROCESSES; HYDROGEN ATMOSPHERE; HYDROGEN ETCHING; ION MASS SPECTROMETRY; NITROGEN FLUXES; NITROGEN INCORPORATION; SIC EPILAYERS; SURFACE LATTICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58549120936     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.030     Document Type: Article

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