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Volumn 312, Issue 21, 2010, Pages 3219-3224

Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)

(9) Hwang, Jeonghyun a Shields, Virgil B a Thomas, Christopher I a Shivaraman, Shriram a Hao, Dong a Kim, Moonkyung a Woll, Arthur R b Tompa, Gary S c Spencer, Michael G a

a School of Chemical and Molecular Engineering (United States)

b Department of Molecular Biology and Genetics (United States)

c STRUCTURED MATERIALS INDUSTRIES INC (United States)

Author keywords

A1. X ray diffraction; A3. Chemical vapor deposition processes; B1. Graphene; B1. Graphite

Indexed keywords

A-CARBON; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B1. GRAPHENE; B1. GRAPHITE; CATALYTIC METALS; EPITAXIAL RELATIONSHIPS; GRAPHITIC CARBONS; GRAPHITIC LAYERS; GROWTH TIME; LORENTZIAN LINE SHAPE; PEAK INTENSITY; ROTATIONAL DISORDER; SUBSTRATE SURFACE; SURFACE NORMALS;

CARBON FILMS; DEPOSITION; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; FILM PREPARATION; GRAPHENE; GRAPHITE; GROWTH TEMPERATURE; PROPANE; RAMAN SPECTROSCOPY; SAPPHIRE; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION; X RAYS;

CHEMICAL VAPOR DEPOSITION;

EID: 77956877210 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.046 Document Type: Article

Times cited : (83)

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