Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors

Langmuir

Volumn 29, Issue 23, 2013, Pages 7143-7150

  Jang, Kwang Suk ^a   Wee, Duyoung ^a   Kim, Yun Ho ^a   Kim, Jinsoo ^a   Ahn, Taek ^b   Ka, Jae Won ^a   Yi, Mi Hye ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Kyungsung University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; GATE INSULATOR; ON/OFF CURRENT RATIO; SIMPLE APPROACH; ZNO; ZNO SEMICONDUCTORS; ZNO TFT;

POLYIMIDES; THIN FILM TRANSISTORS;

ZINC OXIDE;

POLYIMIDE RESIN; RESIN; WATER; YTTRIA; YTTRIUM; ZINC OXIDE;

ARTICLE; CHEMISTRY; PARTICLE SIZE; SEMICONDUCTOR; SOLUTION AND SOLUBILITY; SURFACE PROPERTY;

PARTICLE SIZE; RESINS, SYNTHETIC; SOLUTIONS; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC; WATER; YTTRIUM; ZINC OXIDE;

EID: 84878986748     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la401356u     Document Type: Article

References (36)

1. Kim, M.-G.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. Low-Temperature Fabrication of High-Performance Metal Oxide Thin-Film Electronics via Combustion Processing Nat. Mater. 2011, 10, 382-388
2. Banger, K. K.; Yamashita, Y.; Mori, K.; Peterson, R. L.; Leedham, T.; Rickard, J.; Sirringhaus, H. Low-Temperature, High-Performance Solution-Processed Metal Oxide Thin-Film Transistors Formed by a 'Sol-Gel on Chip' Process Nat. Mater. 2011, 10, 45-50
3. Lee, D.-H.; Chang, Y.-J.; Herman, G. S.; Chang, C.-H. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors Adv. Mater. 2007, 19, 843-847 (Pubitemid 46932815)
4. Lee, D.-H.; Han, S.-Y.; Herman, G. S.; Chang, C.-H. Inkjet Printed High-Mobility Indium Zinc Tin Oxide Thin Film Transistors J. Mater. Chem. 2009, 19, 3135-3137
5. Jeong, S.; Ha, Y.-G.; Moon, J.; Facchetti, A.; Marks, T. J. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors Adv. Mater. 2010, 22, 1346-1350
6. 3 Semiconductor for Thin-Film Transistors J. Phys. Chem. C 2011, 115, 11773-11780
7. Jun, T.; Song, K.; Jung, Y.; Jeong, S.; Moon, J. Bias Stress Stable Aqueous Solution Derived Y-Doped ZnO Thin Film Transistors J. Mater. Chem. 2011, 21, 13524-13529
8. Han, S.-Y.; Herman, G. S.; Chang, C.-H. Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors J. Am. Chem. Soc. 2011, 133, 5166-5169
9. Kim, M.-G.; Kim, H. S.; Ha, Y.-G.; He, J.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors J. Am. Chem. Soc. 2010, 132, 10352-10364
10. Park, S. Y.; Kim, B. J.; Kim, K.; Kang, M. S.; Lim, K.-H.; Lee, T. I.; Myoung, J. M.; Baik, H. K.; Cho, J. H.; Kim, Y. S. Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors Adv. Mater. 2012, 24, 834-838
11. x Inorganic Thin-Film Dielectrics and Nanolaminates Adv. Funct. Mater. 2007, 17, 2117-2124 (Pubitemid 47396197)
12. Avis, C.; Jang, J. High-Performance Solution Processed Oxide TFT with Aluminum Oxide Gate Dielectric Fabricated by a Sol-Gel Method J. Mater. Chem. 2011, 21, 10649-10652
13. Avis, C.; Kim, Y. G.; Jang, J. Solution Processed Hafnium Oxide as a Gate Insulator for Low-Voltage Oxide Thin-Film Transistors J. Mater. Chem. 2012, 22, 17415-17420
14. Pal, B. N.; Dhar, B. M.; See, K. C.; Katz, H. E. Solution-Deposited Sodium Beta-Alumina Gate Dielectrics for Low-Voltage and Transparent Field-Effect Transistors Nat. Mater. 2009, 8, 898-903
15. Song, K.; Yang, W.; Jung, Y.; Jeong, S.; Moon, J. A Solution-Processed Yttrium Oxide Gate Insulator for High-Performance All-Solution-Processed Fully Transparent Thin Film Transistors J. Mater. Chem. 2012, 22, 21265-21271
16. Jung, Y.; Jun, T.; Kim, A.; Song, K.; Yeo, T. H.; Moon, J. Direct Photopatternable Organic-Inorganic Hybrid Gate Dielectric for Solution-Processed Flexible ZnO Thin Film Transistors J. Mater. Chem. 2011, 21, 11879-11885
17. Song, K.; Jeong, Y.; Jun, T.; Koo, C. Y.; Kim, D.; Woo, K.; Kim, A.; Noh, J.; Cho, S.; Moon, J. Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic-Inorganic Hybrid Dielectrics Jpn. J. Appl. Phys. 2010, 49, 05EB02
18. Kim, D.; Jeong, Y.; Song, K.; Park, S.-K.; Cao, G.; Moon, J. Inkjet-Printed Zinc Tin Oxide Thin-Film Transistor Langmuir 2009, 25, 11149-11154
19. Zhao, Y.; Dong, G.; Duan, L.; Qiao, J.; Zhang, D.; Wang, L.; Qiu, Y. Impacts of Sn Precursors on Solution-processed Amorphous Zinc-tin Oxide Films and Their Transistors RSC Adv. 2012, 2, 5307-5313
20. Ahn, T.; Kim, J. W.; Choi, Y.; Yi, M. H. Hybridization of a Low-Temperature Processable Polyimide Gate Insulator for High Performance Pentacene Thin-Film Transistors Org. Electron. 2008, 9, 711-720
21. Fukukawa, K.; Shibasaki, Y.; Ueda, M. Efficient Catalyst for Low Temperature Solid-Phase Imidization of Poly(amic acid) Chem. Lett. 2004, 33, 1156-1157 (Pubitemid 39556091)
22. Jang, K.-S.; Suk, H. J.; Kim, W. S.; Ahn, T.; Ka, J.-W.; Kim, J.; Yi, M. H. Direct Photo-Patternable, Low-Temperature Processable Polyimide Gate Insulator for Pentacene Thin-Film Transistors Org. Electron. 2012, 13, 1665-1670
23. Lee, J. H.; Ahn, C. H.; Hwang, S.; Woo, C. H.; Park, J.-S.; Cho, H. K.; Lee, J. Y. Role of the Crystallinity of ZnO Films in the Electrical Properties of Bottom-gate Thin Film Transistors Thin Solid Films 2011, 519, 6801-6805
24. Shin, J. W.; Lee, J. Y.; No, Y. S.; Kim, T. W.; Choi, W. K. Effects of Thermal Treatment on the Formation of the Columnar Structures in ZnO Thin Films Grown on p -Si (100) Substrates J. Appl. Phys. 2006, 100, 013526
25. Elshocht, S. V.; Hardy, A.; Adelmann, C.; Caymax, M.; Conard, T.; Franquet, A.; Richard, O.; Bael, M. K. V.; Mullens, J.; Gendt, S. D. Impact of Process Optimizations on the Electrical Performance of High-k Layers Deposited by Aqueous Chemical Solution Deposition J. Electrochem. Soc. 2008, 155, G91-G95
26. Jung, Y.; Jun, T.; Kim, A.; Song, K.; Yeo, T. H.; Moon, J. Direct Photopatternable Organic-inorganic Hybrid Gate Dielectrics for Solution-Processed Flexible ZnO Thin Film Transistors J. Mater Chem. 2011, 21, 11879-11885
27. Xiong, G.; Jones, G. A. C.; Rungsawang, R.; Anderson, D. Non-Aqueous Solution Processed ZnO Thin Film Transistors Thin Solid Films 2010, 518, 4019-4023
28. Norris, B. J.; Anderson, J.; Wager, J. F.; Keszler, D. A. Spin-Coated Zinc Oxide Transparent Transistors J. Phys. D 2003, 36, L105-L107
29. Cheng, H.-C.; Chen, C.-F.; Tsay, C.-Y. Transparent ZnO Thin Film Transistor Fabricated by Sol-Gel and Chemical Bath Deposition Combination Method Appl. Phys. Lett. 2007, 90, 012113
30. Cho, S. Y.; Kang, Y. H.; Jung, J.-Y.; Nam, S. Y.; Lim, J.; Yoon, S. C.; Choi, D. H.; Lee, C. Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors Chem. Mater. 2012, 24, 3517-3524
31. Fan, J. C. C.; Goodenough, J. B. X-ray Photoemission Spectroscopy Studies of Sn-Doped Indium-Oxide Films J. Appl. Phys. 1977, 48, 3524-3531
32. Bong, H.; Lee, W. H.; Lee, D. Y.; Kim, B. J.; Cho, J. H.; Cho, K. High-Mobility Low-Temperature ZnO Transistors with Low-Voltage Operation Appl. Phys. Lett. 2010, 96, 192115
33. 4 Nanocrystals and Their Potential for Thin Film Field Effect Transistor Applications Chem. Mater. 2011, 23, 2428-2438
34. Donley, C.; Dunphy, D.; Panie, D.; Carter, C.; Nebesny, K.; Lee, P.; Alloway, D.; Armstrong, N. R. Characterization of Indium-Tin Oxide Interfaces Using X-ray Photoelectron Spectroscopy and Redox Processes of a Chemisorbed Probe Molecule: Effect of Surface Pretreatment Conditions Langmuir 2002, 18, 450-457 (Pubitemid 35384154)
35. Crist, V. B. Handbooks of Monochromatic XPS Spectra: The Elements and Native Oxides; XPS International LLC: Mountain View, CA, 2004.
36. Kim, M.-G.; Kim, H. S.; Ha, Y.-G.; He, J.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors J. Am. Chem. Soc. 2010, 132, 10352-10364