Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors

Thin Solid Films

Volumn 519, Issue 20, 2011, Pages 6801-6805

  Lee, Ju Ho ^a   Ahn, Cheol Hyoun ^b   Hwang, Sooyeon ^a   Woo, Chang Ho ^b   Park, Jin Seong ^c   Cho, Hyung Koun ^b   Lee, Jeong Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Dankook University   (South Korea)

Author keywords

Hump; Microstructure; Ostwald ripening; Thin film transistor; ZnO

Indexed keywords

CHANNEL LAYERS; CRYSTALLINITIES; ELECTRICAL PERFORMANCE; HUMP; MICROSTRUCTURAL CHARACTERISTICS; PREFERRED ORIENTATIONS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SATURATION BEHAVIOR; SMALL GRAINS; STRONG CORRELATION; TRANSFER CURVES; ZNO; ZNO FILMS;

ELECTRIC PROPERTIES; GRAIN BOUNDARIES; METALLIC FILMS; OSTWALD RIPENING; THIN FILM DEVICES; THIN FILMS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 80051546462     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.041     Document Type: Conference Paper

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