High temperature interconnect and die attach technology: Au-Sn SLID bonding

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 3, Issue 6, 2013, Pages 904-914

  Tollefsen, Torleif André ^a,b   Larsson, Andreas ^a   Løovvik, Ole Martin ^c,d   Aasmundtveit, Knut E ^b  

^a SINTEF ICT   (Norway)

^b UNIVERSITY OF SOUTH EASTERN NORWAY   (Norway)

^c SINTEF MATERIALS AND CHEMISTRY   (Norway)

^d UNIVERSITY OF OSLO   (Norway)

Author keywords

Au Sn solid liquid interdiffusion (SLID) bonding; density functional theory (DFT); die attach; high temperature (HT); interconnect technology

Indexed keywords

DENSITY FUNCTIONAL THEORIES (DFT); DIE-ATTACH; HIGH TEMPERATURE; INTERCONNECT TECHNOLOGY; SOLID-LIQUID;

BONDING; CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; ELECTROPLATING; HIGH TEMPERATURE APPLICATIONS; METALLIZING; NICKEL; SILICON CARBIDE; STRESSES; TECHNOLOGY; TIN;

GOLD;

EID: 84878627027     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2013.2253353     Document Type: Article

References (49)

1. R. R. Tummala and E. J. Rymaszewski, Microelectronics Packaging Handbook. New York, NY, USA: Van Nostrand, 1989.
2. R. R. Tummala, Fundamentals of Microsystems Packaging. New York, NY, USA: McGraw-Hill, 2000.
3. H. Oppermann, "The role of Au/Sn solder in packaging," in Material for Informations Technology, E. Zschech, Ed. New York, NY, USA: Springer-Verlag, 2005.
4. H. S. Chin, K. Y. Cheong, and A. B. Ismail, "A review on die attach materials for SiC-based high-temperature power devices," Metall. Mater. Trans. B, vol. 41, no. 4, pp. 824-832, Aug. 2010.
5. L. Coppola, D. Huff, F. Wang, P. R. Burgos, and D. Boroyevich, "Survey on high-temperature packaging materials for SiC-based power electronics modules," in Proc. IEEE Power Electron. Specialists Conf., vols. 1-6. Jun. 2007, pp. 2234-2240.
6. P. Zheng, "High temperature electronics packaging processes and materials development," Ph.D. dissertation, Dept. Technol. Eng., Auburn Univ., Auburn, AL, USA, 2010.
7. J. G. Bai, Z. Z. Zhang, J. Calata, N. Lu, and Q. Guo-Quan, "Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material," IEEE Trans. Compon. Packag. Technol., vol. 29, no. 3, pp. 589-593, Sep. 2006. (Pubitemid 44375461)
8. C. R. Chang and J. H. Jean, "Effects of silver-paste formulation on camber development during the cofiring of a silver-based, low-temperature- cofired ceramic package," J. Amer. Ceramic Soc., vol. 81, no. 11, pp. 2805-2814, Nov. 1998.
9. P. Zheng, P. Zheng, P. Henson, and L. Chen, "Metallurgy for SiC Die attach for operation at 500 °C," in Proc. Int. Conf. Exhibit. High Temp. Electron., 2010, pp. 8-17.
10. S. A. Yang and A. Christou, "Failure model for silver electrochemical migration," Ieee Trans. Device Mater. Rel., vol. 7, no. 1, pp. 188-196, Mar. 2007. (Pubitemid 47109519)
11. S. H. Mannan and M. P. Clode, "Materials and processes for implementing high-temperature liquid interconnects," IEEE Trans. Adv. Packag., vol. 27, no. 3, pp. 508-514, Aug. 2004.
12. G. Muralidharan, "Composite die-attach materials for high-temperature packaging applications," in Proc. High Temp. Electron. Conf., 2006, pp. 593-601.
13. Y. Takaku, I. Ohnuma, R. Kainuma, Y. Yamada, Y. Yagi, Y. Nishibe, and K. Ishida, "Development of Bi-base high-temperature Pb-free solders with second-phase dispersion: Thermodynamic calculation, microstructure, and interfacial reaction," J. Electron. Mater., vol. 35, no. 11, pp. 1926-1932, Nov. 2006. (Pubitemid 46011421)
14. L. Bernstein, "Semiconductor joining by solid-liquid-interdiffusion (SLID) process," J. Electrochem. Soc., vol. 113, no. 12, pp. 1282-1288, Dec. 1966.
15. L. Bernstein and H. Bartholomew, "Applications of solid-liquid interdiffusion (SLID) bonding in integrated-circuit fabricatoin," Trans. Metall. Soc. AIME, vol. 236, no. 3, pp. 405-411, 1966.
16. D. S. Duvall, W. A. Owczarshi, and D. F. Paulonis, "TLP bonding: A new method for joining heat resisant alloys," IEEE J., vol. 53, no. 4, pp. 203-214, Apr. 1974.
17. W. D. Macdonald and T. W. Eagar, "Transient liquid-phase bonding," Ann. Rev. Mater. Sci., vol. 22, no. 1, pp. 23-46, Aug. 1992.
18. R. Schmid-Fetzer, Design Fundamentals of High-Temperature Composites, Intermetallics and Metal-Ceramic Systems, R. Y. Lin, Ed. Warrendale, PA, USA: TMS, 1995, pp. 75-97.
19. W. R. Johnson, C. Wang, Y. Liu, and D. J. Scifield, "Power device packaging technologies for extreme environments," IEEE Trans. Electron. Packag. Manuf., vol. 30, no. 3, pp. 182-193, Jul. 2007. (Pubitemid 47098802)
20. K. E. Aasmundtveit, K. Y. Wang, N. D. Høivik, J. M. Graff, and A. Elfving, "Au-sn SLID bonding: Fluxless bonding with high temperature stability to above 350 °C," in Proc. Eur. Microelectron. Packag. Conf., Jun. 2009, pp. 723-728.
21. K. Aasmundtveit, T. T. Luu, H.-V. Nguyen, R. Johannessen, N. D. Høivik, K. Y. Wang, "Au-Sn fluxless SLID bonding: Effect of bonding temperature for stability at high temperature, above 400 °C," in Proc. Electron. Syst. Integr. Technol. Conf., Sep. 2010, pp. 1-6.
22. 3Sn growth in Ag-Sn-Ag system during transient liquid phase soldering process," Acta Mater., vol. 58, no. 9, pp. 3429-3443, May 2010.
23. C. L. Lee, Y. W. Chen, and M. Goran, "Advances in bonding technology for electronic packaging," J. Electron. Packag., vol. 115, no. 2, pp. 201-207, Jun. 1993.
24. K. Y. Wang, K. E. Aasmundtveit, and H. Jakobsen, "Surface evolution and bonding properties of electroplated Au/Sn/Au," in Proc. 2nd Electron. Syst., Integr. Technol. Conf., vols. 1-2. Sep. 2008, pp. 1131-1134.
25. G. S. Matijasevic, C. C. Lee, and C. Y. Wang, "Au-Sn alloy phase-diagram and properties related to its use as a bonding medium," Thin Solid Films, vol. 223, no. 2, pp. 276-287, Feb. 1993.
26. N. D. Høivik, K. E. Aasmundtveit, G. Salomonsen, A. Lapadatu, G. Kittilsland, and B. Stark, "Fluxless wafer-level Cu-Sn bonding for micro-and nanosystems packaging," in Proc. Present. Electron. Syst. Integr. Technol. Conf., Sep. 2010, pp. 1-5.
27. H. Huebner, S. Penka, B. Barchmann, M. Eigner, W. Gruber, M. Nobis, S. Janka, G. Kristen, and M. Schneegans, "Microcontacts with sub-30 mu m pitch for 3D chip-on-chip integration," Microelectron. Eng., vol. 83, nos. 11-12, pp. 2155-2162, Nov.-Dec. 2006. (Pubitemid 44792793)
28. S. Bader, W. Gust, and H. Hieber, "Rapid formation of intermetallic compounds by interdiffusion in the Cu-Sn and Ni-Sn systems," Acta Metall. Et Mater., vol. 43, no. 1, pp. 329-337, Jan. 1995.
29. 4 intermetallic compounds derived by diffusion couples," Mater. Sci. Eng. A, Struct. Mater. Properties Microstruct. Process., vol. 485, nos. 1-2, pp. 305-310, Jun. 2008. (Pubitemid 351545554)
30. W. W. So and C. C. Lee, "High temperature joints manufactured at low temperature," in Proc. IEEE 48th Electron. Compon. Technol. Conf., May 1998, pp. 284-291.
31. R. W. Chuang and C. C. Lee, "Silver-indium joints produced at low temperature for high temperature devices," IEEE Trans. Compon. Packag. Technol., vol. 25, no. 9, pp. 453-458, Sep. 2002.
32. P. Quintero, "Development of a shifting melting point ag-in paste via transient liquid phase sintering for high temperature environments," Ph.D. dissertation, Dept. Mech. Eng., Univ. Maryland, College Park, Md, USA, 2008.
33. T. A. Tollefsen, A. Larsson, O. M. Løvvik, and K. Aasmundtveit, "Au-Sn SLID Bonding-Properties and possibilities," Metall. Mater. Trans. B, vol. 43, no. 2, pp. 397-405, Apr. 2012.
34. T. A. Tollefsen, A. Larsson, O. M. Løvvik, and K. Aasmundtveit, "Au-Sn SLID bonding for high temperature applications," in Proc. IMAPS High Temp. Electron. Network Conf., 2011, pp. 58-67.
35. H. Okamoto, "Au-Sn (Gold-Tin)," J. Phase Equilibria Diffusion, vol. 28, p. 490, Oct. 2007. (Pubitemid 350001019)
36. H. S. Liu, C. L. Liu, K. Ishida, and Z. P. Jin, "Thermodynamic modeling of the Au-In-Sn system," J. Electron. Mater., vol. 32, no. 11, pp. 1290-1296, Nov. 2003.
37. R. R. Chromik, D.-N. Wanga, A. Shugara, L. Limataa, M. R. Notisa, and R. P. Vincia, "Mechanical properties of intermetallic compounds in the Au-Sn system," J. Mater. Res., vol. 20, no. 8, pp. 2161-2172, Aug. 2005. (Pubitemid 41763319)
38. R. Johannessen, "High Temperature Power Electronic Packaging for Oil Well Applications," in Proc. IMAPS High Temp. Electron. Network Conf., Sep. 2009, pp. 1-9.
39. Z. J. Shen, "High temperature, high power module design for wide bandgap semiconducters: Packaging architecture and materials considerations," in Proc. High Impact Technol. Exchange Conf., May 2008, pp. 1-6.
40. M. N. Yoder, "Wide bandgap semiconductor materials and devices," IEEE Trans. Electron Devices, vol. 43, no. 10, pp. 1633-1636, Oct. 1996. (Pubitemid 126769151)
41. N. G. Wright, B. H. Alton, and K. Vassilevski, "Prospects for SiC electronics and sensors," Mater. Today, vol. 11, nos. 1-2, pp. 16-21, Jan.-Feb. 2008. (Pubitemid 350278571)
42. G. Kresse and J. Hafner, "Abinitio molecular-dynamics for liquid-metals," Phys. Rev. B, vol. 47, no. 1, pp. 558-561, Jan. 1993.
43. G. Kresse and J. Furthmuller, "Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set," Phys. Rev. B, vol. 54, no. 10, pp. 11169-11186, Oct. 1996.
44. J. P. Perdew, J. A. Chevary, and S. H. Vosko, "Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation," Phys. Rev. B, vol. 46, no. 11, pp. 6671-6687, Sep. 1992.
45. G. Kresse and D. Joubert, "From ultrasoft pseudopotentials to the projector augmented-wave method," Phys. Rev. B, vol. 59, no. 3, pp. 1758-1775, Jan. 1999.
46. FIZ Karlsruhe Inorganic Crystal Structure Database (ICSD). (2010, Aug. 26) [Online]. Available: http://www.fiz-karlsruhe.de/icsd.html
47. H. Hieber, "Heat-resistant contacts with use of liquid phase transition," in Proc. 7th Eur. Hybrid Microelectron. Conf., 1993, pp. 7-13.
48. D. R. Frear, Mechanical-Behavior Of Solder Joint Interfacial Inter-metallics. Materials Park, OH, USA: ASM International, 1991.
49. S. Anhock, H. H. Oppermann, C. Kallmayer, R. Aschenbrenner, L. K. Thomas, and C. H. Reichl, "Investigations of Au/Sn alloys on different end-metallizations for high temperature applications," in Proc. IEEE Int. Electron. Manuf. Technol. Symp., Apr. 1998, pp. 156-165.