Evaluation of an advanced dual hard mask stack for high resolution pattern transfer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8685, Issue , 2013, Pages

  Paul, J ^a   Rudolph, M ^a   Riedel, S ^a   Thrun, X ^a   Wege, S ^b   Hohle, C ^a  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b Plasway ^*  (Germany)

Author keywords

ALD; Atomic layer deposition; Dry etching; Dual hard mask; High aspect ratio; RIE; Selectivity; Si trench; Spin on; Thin resist; ZrO2

Indexed keywords

ALD; HARD MASKS; HIGH ASPECT RATIO; SPIN-ON; THIN RESIST; ZRO2;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; CATALYST SELECTIVITY; DRY ETCHING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON OXIDES; SURFACE ROUGHNESS;

ZIRCONIUM ALLOYS;

EID: 84878435328     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2018247     Document Type: Conference Paper

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