Nanolithography using spin-coatable ZrO2 resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

Nanotechnology

Volumn 19, Issue 15, 2008, Pages

  Liu, Boyang ^a   Huang, Yingyan ^a   Xu, Guoyang ^a   Ho, Seng Tiong ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORESISTS; SEMICONDUCTOR MATERIALS; SPIN COATING; ZIRCONIA;

ELECTRONIC DEVICES; PATTERN TRANSFER; SEMICONDUCTOR ETCHING SELECTIVITY;

NANOLITHOGRAPHY;

POLY(METHYL METHACRYLATE); SILICON DIOXIDE; ZIRCONIUM OXIDE;

ARTICLE; INFRARED SPECTROSCOPY; NANOANALYSIS; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE; X RAY DIFFRACTION;

COATING; LITHOGRAPHY; RESISTANCE; SEMICONDUCTORS; ZIRCONIUM COMPOUNDS;

EID: 42549094586     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/15/155303     Document Type: Article

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