Effect of rare gas addition on deep trench silicon etch

Microelectronic Engineering

Volumn 75, Issue 3, 2004, Pages 275-284

  Panda, Siddhartha ^a   Wise, Richard ^a   Mosden, Aelan ^b   Sugiyama, Kenro ^b   Camilleri, Joseph ^b  

^a IBM MICROELECTRONICS   (United States)

^b Tokyo Electron America Inc   (United States)

Author keywords

Deep trench; HBr; NF3; Noble gas; Silicon etch

Indexed keywords

DEEP TRENCH; HBR; NF3; NOBLE GAS; SILICON ETCH;

ANISOTROPY; ARGON; DEPOSITION; OXYGEN; PASSIVATION; PLASMA DENSITY; PLASMA ETCHING; TRENCHING;

SILICON;

EID: 4344667220     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.05.009     Document Type: Article

References (25)

1. Tuda M., Shintani K., Ootera H. J. Vac. Sci. Technol. A. 19:2001;711-717.
2. Desvoivres L., Vallier L., Joubert O. J. Vac. Sci. Technol. B. 18:2000;156-165.
3. Low C.H., Chin W.S., Tan K.L., Loh F.C., Zhou M., Zhong Q.H., Chan L.H. Jpn. J. Appl. Phys. 39:2000;14-19.
4. Nishikawa K., Oomori T., Ono K., Tuda M. Jpn. J. Appl. Phys. 35:1996;2421-2426.
5. Takechi K., Lieberman M.A. J. Appl. Phys. 90:2001;3205-3211.
6. Basset N.L., Economou D.J. J. Appl. Phys. 75:1994;1931-1939.
7. Booth J.P., Joubert O., Pelletier J., Sadeghi N. J. Appl. Phys. 69:1991;618-626.
8. Tsuji M., Okano S., Tanaka A., Nishimura Y. Jpn. J. Appl. Phys. 38:1999;6470-6475.
9. Shih M.C., Freiler M.B., Scarmozzino R., Osgood R.M. Jr. J. Vac. Sci. Technol. B. 13:1995;43-54.
10. Langan J.G., Beck S.E., Felker B.S., Rynders S.W. J. Appl. Phys. 79:1996;3886-3894.
11. Scofield J.D., Ganguly B.N., Bletzinger P. J. Vac. Sci. Technol. A. 18:2000;2175-2184.
12. Mansano R.D., Verdonck P., Maciel H.S. Appl. Surf. Sci. 100/101:1996;583-586.
13. Kazumi H., Hamasaki R., Tago K. Plasma Sources Sci. Technol. 5:1996;200-209.
14. Chang S.-L.L., Hanestad R., Butterbaugh J.W. Solid State Technol. 41(5):1998;71-76.
15. R.A. Gottscho, G.R. Scheller, in: G.S. Mathad, G.C. Schwartz, R.A. Gottscho (Eds.), Proceedings of the Sixth Symposium on Plasma Processing, vol. 87-86, Electrochemical Society, Pennington, NJ, 1987, pp. 201-207.
16. Lieberman M.A., Lichtenberg A.J. Principles of Plasma Discharges and Materials Processing. 1994;Wiley, New York.
17. Lee J.-M., Chang K.-M., Lee I.-H., Park S.-J. J. Electrochem. Soc. 147:2000;1859-1863.
18. Jung K.B., Cho H., Hahn Y.B., Hays D.C., Lambers E.S., Park Y.D., Feng T., Childress J.R., Pearton S.J. J. Electrochem. Soc. 146:1999;1465-1468.
19. Honda T., Brandt W.W. J. Electrochem. Soc. 131:1984;2667-2670.
20. Miller T.M., Friedman J.F., Miller A.E.S., Paulson J.F. J. Phys. Chem. 98:1994;6144-6147.
21. Nordheden K.J., Verdeyen J.T. J. Electrochem. Soc. 133:1986;2168-2171.
22. Nagata, Ichihashi H., Kusunoki Y., Horiike Y. Jpn. J. Appl. Phys. 28:1989;2368-2371.
23. Blom H.-O., Berg S., Nender C., Norstrom H. J. Vac. Sci. Techol. B. 7:1989;1321-1324.
24. Perrin J., Meot J., Siefert J.-M., Schmitt J. Plasma Chem. Plasma Proc. 10:1990;571-587.
25. Panda S., Ranade R., Mathad G. J. Electrochem. Soc. 150:2003;G612-G616.