Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon

Thin Solid Films

Volumn 520, Issue 14, 2012, Pages 4527-4531

  Paul, Jan ^a   Riedel, Stefan ^a   Rudolph, Matthias ^a   Wege, Stephan ^b   Czernohorsky, Malte ^a   Sundqvist, Jonas ^a   Hohle, Christoph ^a   Beyer, Volkhard ^a  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b Plasway   (Germany)

Author keywords

Atomic layer deposition; Deep silicon trench; Dry etch; Hardmask; High aspect ratio; High selectivity; Zirconium oxide

Indexed keywords

DRY-ETCH; HARDMASKS; HIGH ASPECT RATIO; HIGH SELECTIVITY; SILICON TRENCH;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; DRY ETCHING; PHOTORESISTS; SILICON OXIDES; ZIRCONIA; ZIRCONIUM ALLOYS;

SILICON;

EID: 84860285941     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.209     Document Type: Conference Paper

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