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Volumn 11, Issue 9, 2011, Pages 3612-3616

Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition

Author keywords

chemical vapor deposition; Graphene; graphitization; Raman spectroscopy; transparent conductive film

Indexed keywords

CARBON SPECIES; CHEMICAL VAPOR DEPOSITION PROCESS; CU SURFACES; CU THIN FILM; GRAPHENE LAYERS; HIGH QUALITY; INSULATING SUBSTRATES; PROCESS PARAMETERS; SI WAFER; THIN LAYERS; TRANSISTOR CHARACTERISTICS; TRANSPARENT CONDUCTIVE FILMS; WAFER SCALE;

EID: 80052804742     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201362n     Document Type: Article
Times cited : (314)

References (37)
  • 3
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    • Schwierz, F. Nat Nano 2010, 5 (7) 487-496
    • (2010) Nat Nano , vol.5 , Issue.7 , pp. 487-496
    • Schwierz, F.1
  • 32
    • 42049106021 scopus 로고    scopus 로고
    • Rotational Disorder in Few-Layer Graphene Films on 6H-SiC(000-1): A Scanning Tunneling Microscopy Study
    • Varchon, F; Mallet, P; Magaud, L; Veuillen, J. Y. Rotational Disorder in Few-Layer Graphene Films on 6H-SiC(000-1): A Scanning Tunneling Microscopy Study Phys. Rev. B 2008, 77, 165415
    • (2008) Phys. Rev. B , vol.77 , pp. 165415
    • Varchon, F.1    Mallet, P.2    Magaud, L.3    Veuillen, J.Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.