Amorphous-SiCBN-based metal-semiconductor-metal photodetector for high-temperature applications

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 713-715

  Vijayakumar, Arun ^a   Todi, Ravi M ^b   Sundaram, Kalpathy B ^a  

^a University of Central Florida   (United States)

^b IBM RESEARCH   (United States)

Author keywords

High temperature; Metal semiconductor metal (MSM); Photodetector (PD); SiCBN

Indexed keywords

AMORPHOUS FILMS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS;

CURRENT RATIO; CURRENT SENSITIVITY FACTOR; METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURE;

PHOTODETECTORS;

EID: 34547739570     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.902083     Document Type: Article

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