Ultra-high-responsivity broadband detection of Si metal-semiconductor-metal schottky photodetectors improved by ZnO nanorod arrays

ACS Nano

Volumn 5, Issue 10, 2011, Pages 7748-7753

  Tsai, Dung Sheng ^a,b   Lin, Chin An ^a   Lien, Wei Cheng ^a,c   Chang, Hung Chih ^a   Wang, Yuh Lin ^b   He, Jr Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

antireflection; nanorod; nanowire; photodetector; photodiode; ZnO

Indexed keywords

ANTI-REFLECTION; BROADBAND DETECTION; ENHANCED PERFORMANCE; GROWTH AREAS; HIGH GROWTH RATE; HIGH POTENTIAL; HYDROTHERMAL METHODS; LONG WAVELENGTH; LOW TEMPERATURES; METAL SEMICONDUCTOR METAL; ORDERS OF MAGNITUDE; REFRACTIVE INDEX MATCHING; RESPONSIVITY; SCHOTTKY PHOTODETECTORS; SI-BASED PHOTODETECTORS; UV REGION; UV- AND; ZNO; ZNO NANOROD ARRAYS;

FINITE DIFFERENCE TIME DOMAIN METHOD; METALS; NANORODS; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON; TIME DOMAIN ANALYSIS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80054973844     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn203357e     Document Type: Article

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