Preventing interfacial recombination in colloidal quantum dot solar cells by doping the metal oxide

ACS Nano

Volumn 7, Issue 5, 2013, Pages 4210-4220

  Ehrler, Bruno ^a   Musselman, Kevin P ^a   Böhm, Marcus L ^a   Morgenstern, Frederik S F ^a   Vaynzof, Yana ^a   Walker, Brian J ^a   MacManus Driscoll, Judith L ^b   Greenham, Neil C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

colloidal quantum dot solar cells; intragap states; metal oxide; recombination; solar cell

Indexed keywords

COLLOIDAL QUANTUM DOTS; INTRAGAP STATES; METAL OXIDES; PHOTOCURRENT MEASUREMENT; RECOMBINATION; TRANSIENT ABSORPTION SPECTROSCOPIES; TRANSIENT PHOTOVOLTAGE DECAY; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

CARRIER CONCENTRATION; HETEROJUNCTIONS; INTERFACE STATES; METALLIC COMPOUNDS; OPEN CIRCUIT VOLTAGE; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SOLAR CELLS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84878278049     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400656n     Document Type: Article

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