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Volumn 14, Issue 8, 2013, Pages 2007-2013

Controllable threshold voltage of a pentacene field-effect transistor based on a double-dielectric structure

(4) Dao, Toan Thanh a,b Matsushima, Toshinori a Friedlein, Rainer a Murata, Hideyuki a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b University of Transport and Communications (Viet Nam)

Author keywords

Controllable threshold voltage; Interfacial charge trapping; Organic nonvolatile memory; Pentacene field effect transistor

Indexed keywords

NONVOLATILE STORAGE; REFRACTORY METAL COMPOUNDS; SILICA; THRESHOLD VOLTAGE;

CONDUCTING CHANNELS; DIELECTRIC STRUCTURE; INTERFACIAL CHARGE; NON-VOLATILE MEMORY; ORGANIC NONVOLATILE MEMORY; PENTACENE FIELD EFFECT TRANSISTORS; SWITCHING VOLTAGES; THRESHOLD VOLTAGES (VTH);

FIELD EFFECT TRANSISTORS;

EID: 84878245347 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2013.04.045 Document Type: Article

Times cited : (26)

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