High-mobility pentacene-based thin-film transistors with a solution-processed barium titanate insulator

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 90-92

  Wei, Chia Yu ^a   Kuo, Shu Hao ^a   Hung, Yu Ming ^a   Huang, Wen Chieh ^a   Adriyanto, Feri ^a   Wang, Yeong Her ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

Barium titanate; high field effect mobility; high permittivity; organic thin film transistor (OTFT); solution process

Indexed keywords

BARIUM TITANATE THIN FILMS; CHEMICAL COMPOSITIONS; ELECTRICAL PROPERTY; GATE INSULATOR; HIGH FIELD; HIGH FIELD-EFFECT MOBILITY; HIGH MOBILITY; HIGH PERMITTIVITY; LOW THRESHOLD VOLTAGE; ORGANIC THIN FILM TRANSISTORS; PENTACENES; SOLUTION PROCESS; SOLUTION-PROCESSED; STRANSKI-KRASTANOV MODE; SUBTHRESHOLD SLOPE; SURFACE ENERGIES;

BARIUM; BINDING ENERGY; CHEMICAL ANALYSIS; CHEMICAL SENSORS; ELECTRIC PROPERTIES; ORGANIC FIELD EFFECT TRANSISTORS; PERMITTIVITY; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE CHEMISTRY; THIN FILM TRANSISTORS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

BARIUM TITANATE;

EID: 78650896745     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2084559     Document Type: Conference Paper

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