Sheet-type flexible organic active matrix amplifier system using Pseudo-CMOS circuits with floating-gate structure

IEEE Transactions on Electron Devices

Volumn 59, Issue 12, 2012, Pages 3434-3441

  Yokota, Tomoyuki ^a   Sekitani, Tsuyoshi ^a,b   Tokuhara, Takeyoshi ^a   Take, Naoya ^a   Zschieschang, Ute ^c   Klauk, Hagen ^c   Takimiya, Kazuo ^d   Huang, Tsung Ching ^e   Takamiya, Makoto ^f   Sakurai, Takayasu ^f   Someya, Takao ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d HIROSHIMA UNIVERSITY   (Japan)

^e TSMC North America   (United States)

^f INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Flexible electronics; large area sensor; thin film transistors (TFTs)

Indexed keywords

CMOS INTEGRATED CIRCUITS; FEEDBACK AMPLIFIERS; FLEXIBLE ELECTRONICS; GATE DIELECTRICS; SELF ASSEMBLED MONOLAYERS; THIN FILM TRANSISTORS;

2D-ARRAYS; ACTIVE MATRIXES; AMPLIFIER CIRCUITS; AMPLIFIER SYSTEMS; EFFECTIVE SIZE; FLOATING-GATE STRUCTURES; LARGE AREA SENSORS; MECHANICAL PRESSURE; OPERATION VOLTAGE; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; POLYVINYLIDENE DIFLUORIDE; PSEUDO-CMOS; SATURATION REGIME; SIGNAL GAIN; STRAIN SENSING; STRAIN SENSORS; THIN-FILM TRANSISTOR (TFTS); THREE-LAYER;

SENSORS;

EID: 84870300629     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2220853     Document Type: Article

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