Charge trapping in organic transistor memories: On the role of electrons and holes

Organic Electronics

Volumn 10, Issue 7, 2009, Pages 1252-1258

  Debucquoy, M ^a,b   Rockele M ^b   Genoe, J ^a   Gelinck, G H ^c   Heremans, P ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c HOLST CENTRE   (Netherlands)

Author keywords

Ambipolar; Charge trapping; Memory; Organic transistor; Tunneling

Indexed keywords

CHARGE TRAPPING; DATA STORAGE EQUIPMENT; ELECTRON TUNNELING; GATE DIELECTRICS; THRESHOLD VOLTAGE;

AMBIPOLAR; ELECTRONS AND HOLES; OPTIMAL MEMORY; ORGANIC TRANSISTOR; POLYMERIC INSULATORS; SEMICONDUCTOR CHANNELS; THRESHOLD VOLTAGE SHIFTS; TRAPPED CHARGE;

TRANSISTORS;

EID: 69549108126     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.07.005     Document Type: Article

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