Intermediate band photovoltaics based on interband-intraband transitions using In0.53Ga0.47As/InP superlattice

Progress in Photovoltaics: Research and Applications

Volumn 21, Issue 4, 2013, Pages 472-480

  Hu, Weiguo ^a   Harada, Yukihiro ^a   Hasegawa, Aiko ^a   Inoue, Tomoya ^a   Kojima, Osamu ^a   Kita, Takashi ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

device modeling; interband; intermediate band; intraband; solar cell

Indexed keywords

DEVICE MODELING; INTERBAND; INTERBAND AND INTRABAND TRANSITIONS; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; INTRABAND; POTENTIAL DISTRIBUTIONS; TWO-PHOTON TRANSITIONS;

ABSORPTION SPECTROSCOPY; EFFICIENCY; PHOTONS; SOLAR CELLS; SUPERLATTICES;

GALLIUM;

EID: 84878183921     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1208     Document Type: Article

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