Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Applied Physics Letters

Volumn 97, Issue 13, 2010, Pages

  Yoshida, Katsuhisa ^a,b   Okada, Yoshitaka ^a,b   Sano, Nobuyuki ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; BAND-TO-BAND TRANSITION; DEVICE CHARACTERISTICS; DRIFT-DIFFUSION MODEL; ELECTROSTATIC POTENTIALS; GAAS; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; MATERIAL PARAMETER; OPTICAL GENERATION; SELF-CONSISTENT SIMULATIONS; SIMULATION RESULT;

EMPLOYMENT; SOLAR CELLS; STRUCTURAL OPTIMIZATION; SWITCHING CIRCUITS;

COMPUTER SIMULATION;

EID: 77957680210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3488815     Document Type: Article

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