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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2757-2760

InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell

(5) Oshima, Ryuji a,b Takata, Ayami a,b Shoji, Yasushi a,c Akahane, Kouichi a,d Okada, Yoshitaka a,b

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

d NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

Author keywords

Quantum dots; Solar cells; Strain compensation

Indexed keywords

ATOMIC HYDROGEN; DIODE FACTOR; EFFECT OF STRAIN; GAAS; HIGH-CRYSTALLINE QUALITY; HIGH-EFFICIENCY SOLAR CELLS; INAS QUANTUM DOTS; QUANTUM DOT; RECIPROCAL SPACE MAPPING; SOLAR CELL CHARACTERIZATION; STRAIN COMPENSATION; STRAIN-COMPENSATED; STRUCTURAL AND OPTICAL PROPERTIES;

GALLIUM ALLOYS; INDIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; OPTICAL PROPERTIES; SOLAR CELLS; SWITCHING CIRCUITS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958013392 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2009.12.036 Document Type: Conference Paper

Times cited : (36)

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