How shall we put multiple quantum wells in p-i-n structure for efficiency enhancement?

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 676-679

  Sugiyama, Masakazu ^a   Wang, Yunpeng ^b   Choi, Soohyeck ^a   Wen, Yu ^b   Nakano, Yoshiaki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BEST POSITION; CARRIER RECOMBINATION; EFFICIENCY ENHANCEMENT; EXPERIMENTAL ANALYSIS; FILL FACTOR; FORWARD BIAS; HOST STRUCTURE; MAJORITY CARRIERS; MULTIPLE QUANTUM WELLS; P-I-N STRUCTURE; QUANTUM WELL; SHORT-CIRCUIT CONDITIONS; STRAIN-COMPENSATED;

OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SWITCHING CIRCUITS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78650099640     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616857     Document Type: Conference Paper

References (2)

1. M. Mazzer, K.W.J. Barnham, I.M. Ballard, A. Bessiere,
2. Crosslight Software Inc., http://www.crosslight.com/