Correlation between the stability and trap parameters of amorphous oxide thin film transistors

Microelectronic Engineering

Volumn 91, Issue , 2012, Pages 50-53

  Chong, Eugene ^a,b   Park, Ki Ho ^a   Cho, Eun Ah ^c   Choi, Jun Young ^a   Kim, Bosul ^a,b   You, Dong Youn ^a   Jang, Gun Eik ^c   Lee, Sang Yeol ^a,d  

^a Korea Institute of Science and Technology   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Chungbuk National University   (South Korea)

^d Chongju University   (South Korea)

Author keywords

Hf In Zn O; Stability; Thin film transistor

Indexed keywords

AMORPHOUS OXIDES; DEVICE PERFORMANCE; FALLING-RATE; GOOD STABILITY; HF-IN-ZN-O; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED; TRAP PARAMETERS;

AMORPHOUS FILMS; CONVERGENCE OF NUMERICAL METHODS; HAFNIUM; INDIUM; STABILITY; THIN FILMS; ZINC;

THIN FILM TRANSISTORS;

EID: 83455225823     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.10.006     Document Type: Article

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