Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Klupfel F J ^a   Lajn, A ^a   Frenzel, H ^a   Von Wenckstern, H ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AG ATOMS; DYNAMIC PROPERTY; FREQUENCY RANGES; FREQUENCY-DEPENDENT; GATE LAG; GATE MATERIALS; LAG EFFECTS; MESFETS; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; STATIC PROPERTIES; SWITCHING SPEED;

ION BEAMS; MESFET DEVICES; SILVER; ZINC;

FIELD EFFECT TRANSISTORS;

EID: 79955404294     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569628     Document Type: Conference Paper

References (29)

1. E. Fortunato, P. Barquinha, A. Pimentel, A. Gonalves, A. Marques, L. Pereira, and R. Martins, Thin Solid Films 487, 205 (2005). 10.1016/j.tsf.2005. 01.066 (Pubitemid 41046321)
2. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
3. N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, and D. A. Keszler, J. Appl. Phys. 97, 064505 (2005). 10.1063/1.1862767 (Pubitemid 40833716)
4. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 032113 (2008). 10.1063/1.2964197
5. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, and H. von Wenckstern, Phys. Status Solidi A 207, 1437 (2010). 10.1002/pssa.200983771
6. H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Z. Zhang, and M. Grundmann, Adv. Mater. 22, 5332 (2010). 10.1002/adma.201001375
7. M. W. Allen, S. M. Durbin, and J. B. Metson, Appl. Phys. Lett. 91, 053512 (2007). 10.1063/1.2768028 (Pubitemid 47210867)
8. M. W. Allen, R. J. Mendelsberg, R. J. Reeves, and S. M. Durbin, Appl. Phys. Lett. 94, 103508 (2009). 10.1063/1.3089871
9. A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, and R. Denecke, J. Vac. Sci. Technol. B 27, 1769 (2009). 10.1116/1.3086718
10. H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann, Thin Solid Films 518, 1119 (2009). 10.1016/j.tsf.2009.02.149
11. H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, and M. Grundmann, Appl. Phys. Lett. 96, 113502 (2010). 10.1063/1.3339876
12. H. Frenzel, A. Lajn, H. von Wenckstern, and M. Grundmann, J. Appl. Phys. 107, 114515 (2010). 10.1063/1.3430988
13. J. Sun, D. Mourey, D. Zhao, S. K. Park, S. Nelson, D. Levy, D. Freeman, P. Cowdery-Corvan, L. Tutt, and T. Jackson, IEEE Electron Device Lett. 29, 721 (2008). 10.1109/LED.2008.923206
14. D. A. Mourey, S. K. Park, D. A. Zhao, J. Sun, Y. V. Li, S. Subramanian, S. F. Nelson, D. H. Levy, J. E. Anthony, and T. N. Jackson, Org. Electron. 10, 1632 (2009). 10.1016/j.orgel.2009.08.021
15. W.-C. Shin, K. Remashan, J.-H. Jang, M.-S. Oh, and S.-J. Park, J. Korean Phys. Soc. 55, 1514 (2009). 10.3938/jkps.55.1514
16. M. Rocchi, Physica B C 129, 119 (1985). 10.1016/0378-4363(85)90559-5
17. J. P. Harrang, A. Tardella, M. Rosso, P. Alnot, and J. F. Peray, J. Appl. Phys. 61, 1931 (1987). 10.1063/1.338040
18. Y. Fujisaki and N. Matsunaga, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Tech Dig. - Int. Electron Devices Meet. 235 (1988). 10.1109/GAAS.1988.11065
19. H. Sasaki, H. Matsubayashi, O. Ishihara, R. Konishi, and K. Ando, Jpn. J. Appl. Phys. 34, 6346 (1995). 10.1143/JJAP.34.6346
20. R. Vetury, N. Q. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001). 10.1109/16.906451 (Pubitemid 32271174)
21. O. Mitrofanov and M. Manfra, Superlattices Microstruct. 34, 33 (2003). 10.1016/j.spmi.2003.12.002 (Pubitemid 40000670)
22. G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. Mishra, C. Canali, and E. Zanoni, IEEE Trans. Electron Devices 51, 1554 (2004). 10.1109/TED.2004.835025
23. B. Bayraktaroglu, K. Leedy, and R. Neidhard, IEEE Electron Device Lett. 30, 946 (2009). 10.1109/LED.2009.2025672
24. M. N. Berberan-Santos, E. N. Bodunov, and B. Valeur, Chem. Phys. 315, 171 (2005). 10.1016/j.chemphys.2005.04.006 (Pubitemid 41058929)
25. W. Koerner and C. Elsaesser, Phys. Rev. B 81, 085324 (2010). 10.1103/PhysRevB.81.085324
26. H. von Wenckstern, S. Muller, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann, J. Electron. Mater. 39, 559 (2009). 10.1007/s11664-009-0974-1
27. H. von Wenckstern, A. Lajn, A. Laufer, B. K. Meyer, H. Hochmuth, M. Lorenz, and M. Grundmann, in Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors (AIP Conference Proceedings), edited by, M. Caldas, and, N. Studart, (American Institute of Physics, Melville, NY, 2010), p. 122.
28. Y. Kanai, Jpn. J. Appl. Phys. 30, 2021 (1991). 10.1143/JJAP.30.2021
29. Y. F. Yan, M. M. Al-Jassim, and S. H. Wei, Appl. Phys. Lett. 89, 181912 (2006). 10.1063/1.2378404 (Pubitemid 44705674)