Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

Advanced Materials

Volumn 23, Issue 45, 2011, Pages 5383-5386

  Lorenz, Michael ^a   Von Wenckstern, Holger ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

dielectrics; transistors; zinc oxide

Indexed keywords

ACTIVE-MATRIX DISPLAYS; GATE INSULATOR; GATE VOLTAGES; HARSH ENVIRONMENT; HIGH TRANSPARENCY; LOW-VOLTAGE; TEMPERATURE STABILITY; TEMPERATURE STABLE; TUNGSTEN OXIDE;

DIELECTRIC MATERIALS; ION SENSITIVE FIELD EFFECT TRANSISTORS; OXIDES; PH EFFECTS; THIN FILM TRANSISTORS; TRANSISTORS; TUNGSTEN; TUNGSTEN COMPOUNDS; ZINC; ZINC OXIDE;

GATE DIELECTRICS;

OXIDE; TUNGSTEN; TUNGSTEN OXIDE; ZINC OXIDE;

ARTICLE; CHEMISTRY; IMPEDANCE; SEMICONDUCTOR; TEMPERATURE;

ELECTRIC IMPEDANCE; OXIDES; TEMPERATURE; TRANSISTORS, ELECTRONIC; TUNGSTEN; ZINC OXIDE;

EID: 82455212375     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201103087     Document Type: Article

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