A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu2O/CuO thin films with resistive switching potential

Journal of Applied Physics

Volumn 113, Issue 18, 2013, Pages

  Ogwu, A A ^a   Darma, T H ^a  

^a UNIVERSITY OF THE WEST OF SCOTLAND   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; CONTROLLED DEPOSITION; DEPOSITION CONDITIONS; ELECTRONIC SWITCHING; FOURIER TRANSFORM INFRA REDS; MICROELECTRONIC APPLICATIONS; OXYGEN VACANCY MIGRATION; REACTIVE MAGNETRON SPUTTERING;

DEPOSITION; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; MICROELECTRONICS; OXIDE FILMS; OXYGEN; SATELLITES; SWITCHING SYSTEMS; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER;

EID: 84878093000     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804326     Document Type: Article

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